Compound with silicon is the way ahead. | Manufacturing | Mannerisms
Sounds impressive whatever it means.
Drain-induced barrier lowering - Wikipedia, the free encyclopedia
Gosh. still.
This stuff is becoming indistinguishable from magick.
Plus
http://electronicerror.blogspot.co.u...-well-fet.html
SAS will explain it all to us s later.
But I loved this bit:
With Intel, IQE has developed a narrow fin-width 3-D Tri-gate InGaAs QWFET with the steepest sub-threshold swing and smallest DIBL ever reported for any high-K III-V FET.
Drain-induced barrier lowering - Wikipedia, the free encyclopedia
Gosh. still.
This stuff is becoming indistinguishable from magick.
Plus
http://electronicerror.blogspot.co.u...-well-fet.html
SAS will explain it all to us s later.
But I loved this bit:
The transistors were fabricated on a semi-insulating GaAs substrate using a relaxed metamorphic buffer layer of AlyIn1-ySb to accommodate lattice mismatch, a compressively strained InSb quantum well confined between layers of AlxIn1-xSb and a Schottky barrier metal gate
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