You what? I've worked in this industry for 30 years & I can't understand the acronyms

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Zippy replied

7 October 2013, 14:16
Originally posted by Stevie Wonder Boy

Its all basic electronics. They are talking about the current over a transistor gate. ... basically lower power for the same result...

Isn't she lovely?

InGaAs = Indium Gallium Arsenide? (just having a guess)
Am confident DIBL was a fireman in Trumpton.
HTH
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Doggy Styles replied

7 October 2013, 08:14
Originally posted by Stevie Wonder Boy

Its all basic electronics. They are talking about the current over a transistor gate. ... basically lower power for the same result...

I thought it was mainly about faster switching. I've obviously been out of the game too long.
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suityou01 replied

6 October 2013, 11:40
Originally posted by Stevie Wonder Boy

Its all basic electronics. They are talking about the current over a transistor gate. ... basically lower power for the same result...
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eek replied

4 October 2013, 08:03
Originally posted by bless 'em all View Post

If I had the smallest DIBL ever I wouldn't be boasting about it.

My concern is that I've just read an article on it and I'm as confused now as I was to begin with.

I thought I understood what it was about until I got to the 10th paragraph on wikipedia and realised that

1) I don't actually understand it
2) chances are I never will

I will ask my open university Physics lecturer neighbour to read that article tonight and confirm if I'm just beyond hope....

Last edited by eek; 4 October 2013, 08:33.
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bless 'em all replied

4 October 2013, 07:58
If I had the smallest DIBL ever I wouldn't be boasting about it.
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zeitghost started a topic You what? I've worked in this industry for 30 years & I can't understand the acronyms

4 October 2013, 07:46
You what? I've worked in this industry for 30 years & I can't understand the acronyms

Compound with silicon is the way ahead. | Manufacturing | Mannerisms

With Intel, IQE has developed a narrow fin-width 3-D Tri-gate InGaAs QWFET with the steepest sub-threshold swing and smallest DIBL ever reported for any high-K III-V FET.

Sounds impressive whatever it means.

Drain-induced barrier lowering - Wikipedia, the free encyclopedia

Gosh. still.

This stuff is becoming indistinguishable from magick.

Plus

http://electronicerror.blogspot.co.u...-well-fet.html

SAS will explain it all to us s later.

But I loved this bit:

The transistors were fabricated on a semi-insulating GaAs substrate using a relaxed metamorphic buffer layer of AlyIn1-ySb to accommodate lattice mismatch, a compressively strained InSb quantum well confined between layers of AlxIn1-xSb and a Schottky barrier metal gate

Last edited by zeitghost; 31 May 2017, 13:58.
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